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Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al<sub>2</sub>O<sub>3</sub> Interfacial Layer over Wide Temperature Range

A. Büyükbaş-Uluşan, A. Tataroğlu, S. Altındal-Yerişkin

2023ECS Journal of Solid State Science and Technology22 citationsDOIOpen Access PDF

Abstract

Temperature dependent electrical-parameters and CTCs in Au/Al 2 O 3 /n-Si SDs have been analysed between 200 K and 400 K using current/voltage (IV) characteristics. While the value of quality/ideality factor (n) decreases, zero bias potential barrier height (BH, Φ B0 ) increases with increasing temperature. The value of Richardson constant (A * ) and activation energy (E a ) were also derived from the conventional Richardson plot (RP) as 0.567 eV and 7.34 × 10 −3 A.cm −2 K −2 , respectively. This low A * value shows that deviation from standard thermionic-emission (TE) model and to determine whether this situation may be described by Gaussian-distribution (GD) model or not, Φ Bo vs n and Φ Bo vs q/(2kT) curves were illustrated. The <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mover accent="true"> <mml:mi mathvariant="normal">Φ</mml:mi> <mml:mo>¯</mml:mo> </mml:mover> </mml:math> B value was found as 1.19 eV from the linear Φ B0 vs n plot for ideal case (n = 1). The mean-value of BH ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mover accent="true"> <mml:mi mathvariant="normal">Φ</mml:mi> <mml:mo>¯</mml:mo> </mml:mover> </mml:mrow> <mml:mrow> <mml:mi mathvariant="normal">B</mml:mi> <mml:mn>0</mml:mn> </mml:mrow> </mml:msub> </mml:math> ) and standart deviation ( σ s ) values were found from the Φ Bo vs q/(2kT) curve as 1.130 eV and 0.127 V, respectively. By using value of σ s , RP was modified and then <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mover accent="true"> <mml:mi mathvariant="normal">Φ</mml:mi> <mml:mo>¯</mml:mo> </mml:mover> </mml:mrow> <mml:mrow> <mml:mi mathvariant="normal">B</mml:mi> <mml:mn>0</mml:mn> </mml:mrow> </mml:msub> </mml:math> and A * values were found as 1.128 eV and 108.88 Acm −2 K −2 , respectively, and this value of A* very close to its theoretical value (=112 Acm −2 K −2 ). The surface state density (N ss ) were also obtained from the forward bias IV data for three-temperatures.

Topics & Concepts

Materials scienceSchottky diodeLayer (electronics)DiodeOptoelectronicsAtmospheric temperature rangeCurrent (fluid)Range (aeronautics)Schottky barrierEngineering physicsNanotechnologyComposite materialThermodynamicsPhysicsSemiconductor materials and interfacesIntegrated Circuits and Semiconductor Failure AnalysisSilicon and Solar Cell Technologies
Analysis of the Current Transport Characteristics (CTCs) in the Au/n-Si Schottky Diodes (SDs) with Al<sub>2</sub>O<sub>3</sub> Interfacial Layer over Wide Temperature Range | Litcius