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Improved Drain Current with Suppressed Short Channel Effect of p + Pocket Double-Gate MOSFET in Sub-14 nm Technology Node

Suman Lata Tripathi, Pooja Pathak, Abhishek Kumar, Sobhit Saxena

2022Silicon19 citationsDOI

Topics & Concepts

Subthreshold slopeMaterials scienceSubthreshold conductionTransistorOptoelectronicsMOSFETDrain-induced barrier loweringGate oxideCMOSThreshold voltageMetal gateElectrical engineeringVoltageEngineeringAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devicesSilicon Carbide Semiconductor Technologies
Improved Drain Current with Suppressed Short Channel Effect of p + Pocket Double-Gate MOSFET in Sub-14 nm Technology Node | Litcius