Continuously tunable uniaxial strain control of van der Waals heterostructure devices
Zhaoyu Liu, Xuetao Ma, John Cenker, Jiaqi Cai, Zaiyao Fei, Paul Malinowski, Joshua Mutch, Yuzhou Zhao, Kyle Hwangbo, Zhong Lin, Arnab Manna, Ji‐Hui Yang, David Cobden, Xiaodong Xu, Matthew Yankowitz, Jiun‐Haw Chu
Abstract
Uniaxial strain has been widely used as a powerful tool for investigating and controlling the properties of quantum materials. However, existing strain techniques have so far mostly been limited to use with bulk crystals. Although recent progress has been made in extending the application of strain to two-dimensional van der Waals (vdW) heterostructures, these techniques have been limited to optical characterization and extremely simple electrical device geometries. Here, we report a piezoelectric-based in situ uniaxial strain technique enabling simultaneous electrical transport and optical spectroscopy characterization of dual-gated vdW heterostructure devices. Critically, our technique remains compatible with vdW heterostructure devices of arbitrary complexity fabricated on conventional silicon/silicon dioxide wafer substrates. We demonstrate a large and continuously tunable strain of up to −0.15% at millikelvin temperatures, with larger strain values also likely achievable. We quantify the strain transmission from the silicon wafer to the vdW heterostructure, and further demonstrate the ability of strain to modify the electronic properties of twisted bilayer graphene. Our technique provides a highly versatile new method for exploring the effect of uniaxial strain on both the electrical and optical properties of vdW heterostructures and can be easily extended to include additional characterization techniques.