Growth and atomic oxygen erosion resistance of Al<sub>2</sub>O<sub>3</sub>-doped TiO<sub>2</sub> thin film formed on polyimide by atomic layer deposition
Chi Yan, Jialin Li, Haobo Wang, Hua Tong, Xiaojun Ye, Kai Wang, Xiao Yuan, Cui Liu, Hongbo Li
Abstract
Al 2 O 3 -doped TiO 2 thin films were deposited on alkali-activated polyimide using atomic layer deposition (ALD). The results demonstrate that polyimide coated with Al₂O₃/TiO₂ films exhibits excellent resistance to atomic oxygen (AO) erosion.
Topics & Concepts
PolyimideAtomic layer depositionDopingMaterials scienceThin filmLayer (electronics)Deposition (geology)Alkali metalOxygenAtomic oxygenChemical engineeringAnalytical Chemistry (journal)Composite materialInorganic chemistryNanotechnologyChemistryOptoelectronicsOrganic chemistryPaleontologyBiologySedimentEngineeringSemiconductor materials and devicesSilicone and Siloxane ChemistrySynthesis and properties of polymers