Litcius/Paper detail

The synthesis of competing phase GeSe and GeSe<sub>2</sub> 2D layered materials

Kentaro Yumigeta, Cassondra Brayfield, Hui Cai, Debarati Hajra, Mark Blei, Sijie Yang, Yuxia Shen, Sefaattin Tongay

2020RSC Advances31 citationsDOIOpen Access PDF

Abstract

) using halide based CVD precursors at ATM pressures and low temperatures. Overall findings also extend our fundamental understanding of their growth by making the first attempt to correlate growth parameters to resulting competing phases of Ge-Se based materials.

Topics & Concepts

NucleationRaman spectroscopyMaterials scienceChemical vapor depositionNanomaterialsHalidePhase (matter)StoichiometrySubstrate (aquarium)Layer (electronics)Chemical engineeringSapphireSemiconductorAnalytical Chemistry (journal)NanotechnologyPhysical chemistryInorganic chemistryChemistryOptoelectronicsOpticsOrganic chemistryLaserPhysicsGeologyEngineeringOceanography2D Materials and ApplicationsPerovskite Materials and ApplicationsChalcogenide Semiconductor Thin Films
The synthesis of competing phase GeSe and GeSe<sub>2</sub> 2D layered materials | Litcius