Nonstationary distributions and relaxation times in a stochastic model of memristor
N. V. Agudov, A. V. Safonov, A. V. Krichigin, Anna A. Kharcheva, A. A. Dubkov, Davide Valenti, Д. В. Гусейнов, A. I. Belov, Alexey Mikhaylov, Angelo Carollo, Bernardo Spagnolo
Abstract
Abstract We propose a stochastic model for a memristive system by generalizing known approaches and experimental results. We validate our theoretical model by experiments carried out on a memristive device based on multilayer structure. In the framework of the proposed model we obtain the exact analytic expressions for stationary and nonstationary solutions. We analyze the equilibrium and non-equilibrium steady-state distributions of the internal state variable of the memristive system and study the influence of fluctuations on the resistive switching, including the relaxation time to the steady-state. The relaxation time shows a nonmonotonic dependence, with a minimum, on the intensity of the fluctuations. This paves the way for using the intensity of fluctuations as a control parameter for switching dynamics in memristive devices.