Transfer-print integration of GaAs p-i-n photodiodes onto silicon nitride waveguides for near-infrared applications
Jeroen Goyvaerts, Sulakshna Kumari, Sarah Uvin, Jing Zhang, Roel Baets, Agnieszka Gocalińska, E. Pelucchi, Brian Corbett, Günther Roelkens
Abstract
We demonstrate waveguide-detector coupling through the integration of GaAs p-i-n photodiodes (PDs) on top of silicon nitride grating couplers (GCs) by means of transfer-printing. Both single device and arrayed printing is demonstrated. The photodiodes exhibit dark currents below 20 pA and waveguide-referred responsivities of up to 0.30 A/W at 2V reverse bias, corresponding to an external quantum efficiency of 47% at 860 nm. We have integrated the detectors on top of a 10-channel on-chip arrayed waveguide grating (AWG) spectrometer, made in the commercially available imec BioPIX-300 nm platform.
Topics & Concepts
PhotodiodeArrayed waveguide gratingMaterials scienceOptoelectronicsOpticsGratingWaveguideDetectorSilicon nitrideResponsivityQuantum efficiencySpectrometerTransfer printingSiliconDiffraction gratingPhotodetectorPhysicsWavelength-division multiplexingWavelengthComposite materialPhotonic and Optical DevicesMechanical and Optical ResonatorsSemiconductor Lasers and Optical Devices