Fabrication of non-volatile memory transistor by charge compensation of interfacial ionic polarization of a ferroelectric gate dielectric
Rajarshi Chakraborty, Nila Pal, Utkarsh Pandey, Subarna Pramanik, Srishti Paliwal, Swati Suman, Akanksha Gupta, Akhilesh Kumar Singh, Parasuraman Swaminathan, P.K. Roy, Bhola Nath Pal, Bhola Nath Pal
Topics & Concepts
Materials scienceFerroelectricityOptoelectronicsDielectricGate dielectricLeakage (economics)TransistorPolarization (electrochemistry)High-κ dielectricGate oxideElectrical engineeringVoltageChemistryMacroeconomicsPhysical chemistryEconomicsEngineeringFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesAdvanced Memory and Neural Computing