Graphene and 2D Hexagonal Boron Nitride Heterostructure for Thermal Management in Actively Tunable Manner
Huibin Sun, Yunlei Jiang, Renjie Hua, Runhua Huang, Lei Shi, Yuan Dong, Suxia Liang, Jing Ni, Chi Zhang, Ruo‐Yu Dong, Yingru Song
Abstract
Thermal management is a critical task for highly integrated or high-power semiconductor devices. Low dimensional materials including graphene and single-layer hexagonal boron nitride (BN) are attractive candidates for this task because of their high thermal conductivity, semi-conductivity and other excellent physical properties. The similarities in crystal structure and chemistry between graphene and boron nitride provide the possibility of constructing graphene/BN heterostructures bearing unique functions. In this paper, we investigated the interfacial thermal transport properties of graphene/BN nanosheets via non-equilibrium molecular dynamics (NEMD) simulations. We observed a significant thermal rectification behavior of these graphene/BN nanosheets, and the rectification ratio increased with the system length increases up to 117%. This phenomenon is attributed to the mismatch of out-of-plane phonon vibration modes in two directions at the interface. In addition, we explored the underlying mechanism of the length dependence of the thermal transport properties. The results show promise for the thermal management of this two-dimensional heterostructure in an actively tunable manner.