Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer
Fang Ren, Bingyao Liu, Bingyao Liu, Zhaolong Chen, Yue Yin, Jingyu Sun, Shuo Zhang, Bei Jiang, Bingzhi Liu, Bingzhi Liu, Zhetong Liu, Zhetong Liu, Jianwei Wang, Meng Liang, Guodong Yuan, Jianchang Yan, Tongbo Wei, Xiaoyan Yi, Junxi Wang, Yong Zhang, Jinmin Li, Peng Gao, Zhongfan Liu, Zhongfan Liu, Zhiqiang Liu, Zhiqiang Liu
Abstract
Van der Waals epitaxy provides a fertile playground for the monolithic integration of various materials for advanced electronics and optoelectronics. Here, a previously unidentified nanorod-assisted van der Waals epitaxy is developed and nearly single-crystalline GaN films are first grown on amorphous silica glass substrates using a graphene interfacial layer. The epitaxial GaN-based light-emitting diode structures, with a record internal quantum efficiency, can be readily lifted off, becoming large-size flexible devices. Without the effects of the potential field from a single-crystalline substrate, we expect this approach to be equally applicable for high-quality growth of nitrides on arbitrary substrates. Our work provides a revolutionary technology for the growth of high-quality semiconductors, thus enabling the hetero-integration of highly mismatched material systems.