Sn‐Based Perovskite Halides for Electronic Devices
Towhid H. Chowdhury, Youjin Reo, Abd. Rashid bin Mohd Yusoff, Yong‐Young Noh
Abstract
Abstract Because of its less toxicity and electronic structure analogous to that of lead, tin halide perovskite (THP) is currently one of the most favorable candidates as an active layer for optoelectronic and electric devices such as solar cells, photodiodes, and field‐effect transistors (FETs). Promising photovoltaics and FETs performances have been recently demonstrated because of their desirable electrical and optical properties. Nevertheless, THP's easy oxidation from Sn 2+ to Sn 4+ , easy formation of tin vacancy, uncontrollable film morphology and crystallinity, and interface instability severely impede its widespread application. This review paper aims to provide a basic understanding of THP as a semiconductor by highlighting the physical structure, energy band structure, electrical properties, and doping mechanisms. Additionally, the key chemical instability issues of THPs are discussed, which are identified as the potential bottleneck for further device development. Based on the understanding of the THPs properties, the key recent progress of THP‐based solar cells and FETs is briefly discussed. To conclude, current challenges and perspective opportunities are highlighted.