Gate‐tunable <scp>Berry</scp> curvature in <scp>van der Waals</scp> itinerant ferromagnetic <scp>Cr<sub>7</sub>Te<sub>8</sub></scp>
K. Y. Meng, Zeya Li, Zhansheng Gao, Xiangyu Bi, Peng Chen, Feng Qin, Caiyu Qiu, Lingyun Xu, Junwei Huang, Jinxiong Wu, Feng Luo, Hongtao Yuan
Abstract
Abstract The anomalous Hall effect (AHE) that associated with the Berry curvature of occupied electronic states in momentum‐space is one of the intriguing aspects in condensed matter physics, and provides an alternative for potential applications in topological electronics. Previous experiments reported the tunable Berry curvature and the resulting magnetization switching process in the AHE based on strain engineering or chemical doping. However, the AHE modulation by these strategies are usually irreversible, making it difficult to realize switchable control of the AHE and the resultant spintronic applications. Here, we demonstrated the switchable control of the Berry‐curvature‐related AHE by electrical gating in itinerant ferromagnetic Cr 7 Te 8 with excellent ambient stability. The gate‐tunable sign reversal of the AHE can be attributed to the redistribution of the Berry curvature in the band structure of Cr 7 Te 8 due to the intercalation‐induced change in the Fermi level. Our work facilitates the applications of magnetic switchable devices based on gate‐tunable Berry curvature. image