Using silicon-vacancy centers in diamond to probe the full strain tensor
Kelsey M. Bates, Matthew W. Day, Christopher L. Smallwood, Rachel C. Owen, Tim Schröder, Edward Bielejec, Ronald Ulbricht, Steven T. Cundiff
Abstract
An ensemble of silicon vacancy (SiV−) centers in diamond is probed using two-pulse correlation spectroscopy and multidimensional coherent spectroscopy. Two main distinct families of SiV− centers are identified, and these families are paired with two orientation groups by comparing spectra from different linear polarizations of the incident laser. By tracking the peak centers in the measured spectra, the full diamond strain tensor is calculated local to the laser spot. Measurements are made at multiple points on the sample surface, and variations in the strain tensor are observed.
Topics & Concepts
DiamondInfinitesimal strain theoryTensor (intrinsic definition)Materials scienceVacancy defectSpectroscopyStrain (injury)SiliconOrientation (vector space)Molecular physicsSpectral lineCondensed matter physicsTracking (education)Atomic physicsOpticsResonant ultrasound spectroscopyLaserNuclear magnetic resonancePhysicsSample (material)Cauchy stress tensorDiamond and Carbon-based Materials ResearchLaser-induced spectroscopy and plasmaHigh-pressure geophysics and materials