Highly Stackable 3D Ferroelectric NAND Devices: Beyond the Charge Trap Based Memory
Sunghyun Yoon, Sung-In Hong, Ga-Ram Choi, Daehyun Kim, Ildo Kim, Seok Min Jeon, Chang-Han Kim, Kyunghoon Min
Abstract
In this study, we demonstrate for the first time the multi-level capable 3D ferroelectricNAND (Fe-NAND) device using the 3D NAND test vehicle for mass production. The present 3D ferroelectric NAND shows the potential multi-level cell operation with the 3.4 V program/erase window. We also reported cycling and retention characteristics.
Topics & Concepts
NAND gateTrap (plumbing)Data retentionFerroelectricityNon-volatile memoryMaterials scienceOptoelectronicsComputer hardwareComputer scienceLogic gateElectrical engineeringPhysicsEngineeringDielectricMeteorologyFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesAdvanced Memory and Neural Computing