Unprecedented atomic surface of silicon induced by environmentally friendly chemical mechanical polishing
Xiangxiang Cui, Zhenyu Zhang, Shiqiang Yu, Xin Chen, Chunjing Shi, Hongxiu Zhou, Fanning Meng, Jiaxin Yu, Wei Wen
Abstract
. Si and ceria are hydroxylated, forming Si-OH and Ce-OH, then dehydration and condensation occur, generating Si-O-Ce. These findings propose new insights to fabricate a sub-angstrom surface of Si for use in IC, semiconductor, and microelectronic industries.
Topics & Concepts
Materials scienceSiliconMicroelectronicsSurface roughnessChemical engineeringEnvironmentally friendlyChemical-mechanical planarizationX-ray photoelectron spectroscopySemiconductorPolishingNanotechnologyLayer (electronics)Composite materialOptoelectronicsBiologyEngineeringEcologyAdvanced Surface Polishing TechniquesSilicon Nanostructures and PhotoluminescenceDiamond and Carbon-based Materials Research