Super alkali (OLi<sub>3</sub>) doped boron nitride with enhanced nonlinear optical behavior
Ali Raza Ayub, Rao Aqil Shehzad, Saleh S. Alarfaji, Javed Iqbal
Abstract
In this study, density functional theory is used to examine the electronic and nonlinear optical properties of a narrative class boron nitride (B[Formula: see text]N[Formula: see text]) doped with super alkali OLi 3 . From the computational investigations, these complexes are highly stable and superalkali prefer a cubic position of the nanocage energetically to be chemisorbed. When superalkali doped on B[Formula: see text]N[Formula: see text], a significant decrease in the HOMO–LUMO energy gap was observed and this shifted the B[Formula: see text]N[Formula: see text] nanocage from insulator to n-type semiconductor. The HOMO–LUMO energy gap of pure B[Formula: see text]N[Formula: see text] was 6.84[Formula: see text]eV and when superalkali (OLi 3 ) is doped on it, the HOMO–LUMO energy gap was changed in the range of 3.94–0.42[Formula: see text]eV. BNM2b showed a HOMO–LUMO energy gap of 3.94[Formula: see text]eV, while BNM4a showed a minimum HOMO–LUMO energy gap (0.42[Formula: see text]eV). Further, these systems showed a remarkable large first hyperpolarizability ([Formula: see text]) in the range of 626.72–75,757[Formula: see text]au and 1045–12,6261[Formula: see text]au. When the charge was shifted from superalkali to the nanocage, a small change in transition energies has occurred and consequently, hyperpolarizability ([Formula: see text]) values increased significantly. The vertical ionization energy of pure B[Formula: see text]N[Formula: see text] is 7.71[Formula: see text]eV, as superalkali is doped on it showed a significant change in VIE in BNM2b that indicated the highest VIE of about 6.47[Formula: see text]eV and BNM4a indicated lowest VIE 2.51[Formula: see text]eV. The TD-DFT investigations described that complexes illustrated greater transparency in the UV part which involves apart from greater NLO response for practical applications in the area of activity of optoelectronics.