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Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer

Ding-kun Shi, Ying Wang, Xue Wu, Zhao-yang Yang, Xingji Li, Jianqun Yang, Fei Cao

2021Solid-State Electronics23 citationsDOI

Topics & Concepts

Materials scienceSchottky barrierSchottky diodeLayer (electronics)PassivationOptoelectronicsMetal–semiconductor junctionDielectricSemiconductorDiffusion barrierSilicon carbideBarrier layerElectrodeSputteringEpitaxyDiodeComposite materialThin filmNanotechnologyChemistryPhysical chemistrySemiconductor materials and interfacesSilicon Carbide Semiconductor TechnologiesIntegrated Circuits and Semiconductor Failure Analysis
Improving the barrier inhomogeneity of 4H-SiC Schottky diodes by inserting Al2O3 interface layer | Litcius