Litcius/Paper detail

Electronic, magnetic, optical and transport properties of wurtzite-GaN doped with rare earth (RE= Pm, Sm, and Eu): First principles approach

E. Maskar, A. Fakhim Lamrani, M. Belaı̈che, Adil Es‐Smairi, Mohamed Khuili, Samah Al‐Qaisi, Tuan V. Vu, P. Raics

2021Surfaces and Interfaces37 citationsDOI

Topics & Concepts

Condensed matter physicsMaterials scienceWurtzite crystal structureFerromagnetismDensity functional theoryDopingFermi levelMagnetic momentBand gapDensity of statesOptical conductivityFermi energySpin polarizationPhysicsElectronMetallurgyZincQuantum mechanicsGaN-based semiconductor devices and materialsZnO doping and propertiesGa2O3 and related materials
Electronic, magnetic, optical and transport properties of wurtzite-GaN doped with rare earth (RE= Pm, Sm, and Eu): First principles approach | Litcius