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Conduction mechanism and impedance analysis of HfO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si20.svg" display="inline" id="d1e505"><mml:msub><mml:mrow/><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>-based RRAM at different resistive states

Jiao Bai, Weiwei Xie, Weiqi Zhang, Zhipeng Yin, Shengsheng Wei, Dehao Qu, Yue Li, Fuwen Qin, Dayu Zhou, Dejun Wang

2022Applied Surface Science28 citationsDOI

Topics & Concepts

Thermal conductionResistive random-access memoryDielectric spectroscopyMaterials scienceGrain boundaryAnalytical Chemistry (journal)Condensed matter physicsChemistryPhysicsComposite materialElectrodePhysical chemistryElectrochemistryMicrostructureChromatographyAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesElectronic and Structural Properties of Oxides
Conduction mechanism and impedance analysis of HfO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si20.svg" display="inline" id="d1e505"><mml:msub><mml:mrow/><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>-based RRAM at different resistive states | Litcius