6 kV/3.4 mΩ·cm<sup>2</sup> Vertical β-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diode With BV<sup>2</sup>/R<sub>on,sp</sub> Performance Exceeding 1-D Unipolar Limit of GaN and SiC
Pengfei Dong, Jincheng Zhang, Qinglong Yan, Zhihong Liu, Peijun Ma, Hong Zhou, Yue Hao
Abstract
In this work, we show that the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> Schottky Barrier Diode (SBD) can perform beyond the 1-D unipolar limit of the SiC and GaN by employing a deep trench with filled thick SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> layer structure to enhance the breakdown voltage (BV). By doing so, BV and specific on- resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{R}_{\text {on},\text {sp}}$ </tex-math></inline-formula> ) of 5–6 kV and 3.4 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{m}\boldsymbol {\Omega } \cdot \text {cm}^{{2}}$ </tex-math></inline-formula> are simultaneously derived on the SBDs with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> epi-layer thickness of 10 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\boldsymbol {\mu } \text{m}$ </tex-math></inline-formula> and diode radius of 90 <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\boldsymbol {\mu }\text{m}$ </tex-math></inline-formula> . Therefore, the Baliga’s power figure of merit (P-FOM = BV <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$^{{2}} /\text{R}_{\text {on,sp}}$ </tex-math></inline-formula> ) is yielded to be 7.4-10.6 GW <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$/$ </tex-math></inline-formula> cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . To the best of all authors’ knowledge, those P-FOMs are the highest values among all types of SBDs, which is a significant step towards the Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> SBD performance improvement. Combined with negligible forward hysteresis and low reverse leakage current, vertical <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> SBDs with state-of-the-art BV and P-FOM show its great promise for next generation high voltage and high power applications.