Large‐Size Ultrathin α‐Ga<sub>2</sub>S<sub>3</sub> Nanosheets toward High‐Performance Photodetection
Yulin Zheng, Xin Tang, Wenliang Wang, Ling Jin, Guoqiang Li
Abstract
Abstract Following the extensive researches of graphene, 2D layered semiconductors have attracted widespread attention for their intriguing physical properties. 2D α‐Ga 2 S 3 as an important member of group III A –VI A semiconductors has outstanding optoelectronic properties. However, the controllable large‐size synthesis of ultrathin α‐Ga 2 S 3 nanosheets still remains a huge challenge. In this paper, a large‐size ultrathin nanosheets of hexagonal Ga 2 S 3 is prepared via an improved chemical vapor deposition method. High‐performance photodetectors based on the ultrathin Ga 2 S 3 nanosheets is demonstrated. The device shows a high photosensitivity/detectivity (9.2 A W −1 /1.4 × 10 12 Jones) and a fast response time (rise/fall time of <4/3 ms), respectively. Strikingly, wearable flexible photodetectors based on Ga 2 S 3 nanosheets are fabricated accordingly and demonstrate great response performance and stability. This work provides a new direction for 2D semiconductors to apply in next‐generation nanoscale smart optoelectronics.