Near-Field Dynamics of Ultra-Wide-Aperture (800 <i>μ</i>m) Diode Lasers Under Nanosecond Pulse Excitation
S. O. Slipchenko, A. A. Podoskin, V. S. Golovin, N. A. Pikhtin, P. S. Kop’ev
Abstract
We present a study of near-field dynamics of ultrawide-aperture (800 μm) high-power diode lasers pumped by nanosecond current pulses. The studied lasers are based on AlGaAs/InGaAs/GaAs asymmetric heterostructure with a wide waveguide and operate at 1060 nm. It is shown that an increased aperture width of 800 μm makes it possible to maintain high emission efficiency at high currents for 3 ns pulses. It is determined that lasing turn-on delay is inhomogeneous along the aperture. Initial turn-on occurs at the edges, while the delay near the aperture center reaches 180-450 ps depending on resonator length and current amplitude. For instance, resonator lengths over 2.5 mm and current amplitude of 90 A correspond to turn-on delay of 200 ps.