High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor
Harrison Sejoon Kim, Su Min Hwang, Xin Meng, Youngchul Byun, Yong Chan Jung, Arul Vigneswar Ravichandran, Akshay Sahota, Si Joon Kim, Jinho Ahn, Lance Lee, Xiaobing Zhou, Byung Keun Hwang, Jiyoung Kim
Abstract
Trisilylamine homolog, tris(disilanyl)amine (TDSA), is introduced as a novel precursor for the deposition of highly etch resistant silicon nitride thin films having a high growth rate at a low temperature (<300 °C) using plasma enhanced ALD process.
Topics & Concepts
Materials scienceAtomic layer depositionSilicon nitridePlasmaNitrideLayer (electronics)SiliconChemical engineeringDeposition (geology)Chemical vapor depositionAmine gas treatingNanotechnologyOptoelectronicsOrganic chemistryChemistryBiologyPhysicsQuantum mechanicsEngineeringSedimentPaleontologySemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignThin-Film Transistor Technologies