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Demonstration of N-Polar GaN MIS-HEMT with High-k Atomic Layer Deposited HfO2 as Gate Dielectric

Subhajit Mohanty, Zhe Jian, Kamruzzaman Khan, Elaheh Ahmadi

2023Journal of Electronic Materials13 citationsDOI

Topics & Concepts

High-electron-mobility transistorGate dielectricMaterials scienceOptoelectronicsDielectricLeakage (economics)MISFETAtomic layer depositionTransistorHigh-κ dielectricMetal gateAnalytical Chemistry (journal)Breakdown voltageGate oxideLayer (electronics)Electrical engineeringVoltageField-effect transistorChemistryNanotechnologyMacroeconomicsEconomicsChromatographyEngineeringGaN-based semiconductor devices and materialsGa2O3 and related materialsSemiconductor materials and devices
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