Litcius/Paper detail

Effects of vertical strain and electrical field on electronic properties and Schottky contact of graphene/MoSe2 heterojunction

Wenjing Zhang, Guoqiang Hao, Rui Zhang, Jiahui Xu, Xiaojun Ye, Hongbo Li

2021Journal of Physics and Chemistry of Solids27 citationsDOI

Topics & Concepts

Schottky barrierHeterojunctionGrapheneMaterials scienceOhmic contactSchottky diodeField-effect transistorCondensed matter physicsOptoelectronicsElectron mobilityMonolayerNanotechnologyTransistorElectrical engineeringPhysicsLayer (electronics)DiodeEngineeringVoltageGraphene research and applications2D Materials and ApplicationsNanowire Synthesis and Applications
Effects of vertical strain and electrical field on electronic properties and Schottky contact of graphene/MoSe2 heterojunction | Litcius