N<sup>+</sup>-ion implantation induced enhanced conductivity in polycrystalline and single crystal diamond
Dhruba Das, M. S. Ramachandra Rao
Abstract
fraction increases gradually with fluence starting from only 6% in the case of low fluence implantations and saturates at 40-50% for implantation at high fluences. A similar observation can be made for single crystal diamond when implanted at high fluence; it retains long-range order but percolative transport takes place through defects or semi-amorphized regions.
Topics & Concepts
CrystalliteDiamondSingle crystalIon implantationIonMaterials scienceFluenceElectrical resistivity and conductivityNitrogenConductivityAnalytical Chemistry (journal)CrystallographyChemistryPhysical chemistryPhysicsMetallurgyQuantum mechanicsOrganic chemistryChromatographyDiamond and Carbon-based Materials ResearchIon-surface interactions and analysisMetal and Thin Film Mechanics