Spin Canting Promoted Manipulation of Exchange Bias in a Perpendicular Coupled Fe<sub>3</sub>GaTe<sub>2</sub>/CrSBr Magnetic van der Waals Heterostructure
Kaipeng Ni, Jiayuan Zhou, Yang Chen, Huanghuang Cheng, Ziyi Cao, Junming Guo, Aljoscha Söll, Xingyuan Hou, Lei Shan, Zdeněk Sofer, Mengmeng Yang, Yue Yang, Jinsong Xu, Mingliang Tian, Wenshuai Gao, Yuxuan Jiang, Yong Fang, Xue Liu
Abstract
Recently, two-dimensional (2D) van der Waals (vdW) magnetic materials have emerged as a promising platform for studying exchange bias (EB) phenomena due to their atomically flat surfaces and highly versatile stacking configurations. Although complex spin configurations between 2D vdW interfaces introduce challenges in understanding their underlying mechanisms, they can offer more possibilities in realizing effective manipulations. In this study, we present a spin-orthogonal arranged 2D Fe 3 GaTe 2 (FGaT)/CrSBr vdW heterostructure, realizing the EB effect with the bias field as large as 1730 Oe at 2 K. Interestingly, this structure induces a positive EB under low cooling field, in contrast to conventional phenomena. Moreover, by employing asymmetric field sweeping methods, we effectively manipulate the zero-field cooling EB of the device with a switchable sign and a tunable magnitude. Thus, these findings not only elucidate a distinct mechanism analysis for EB phenomena with perpendicular coupled spin configurations but also hold promise for promoting contemporary 2D spintronic device applications.