Simulation modelling of III-nitride/β-Ga2O3 HEMT for emerging high-power nanoelectronics applications
G. Purnachandra Rao, Trupti Ranjan Lenka, Rajan Singh, Hieu Pham Trung Nguyen
Topics & Concepts
High-electron-mobility transistorNanoelectronicsMaterials scienceOptoelectronicsFigure of meritBreakdown voltageSubstrate (aquarium)TransistorGallium nitrideLeakage (economics)Field-effect transistorVoltageNanotechnologyElectrical engineeringLayer (electronics)EconomicsOceanographyGeologyMacroeconomicsEngineeringGaN-based semiconductor devices and materialsGa2O3 and related materialsSemiconductor materials and devices