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Doping isolated one-dimensional antiferromagnetic semiconductor vanadium tetrasulfide (VS<sub>4</sub>) nanowires with carriers induces half-metallicity

Shuo Li, Junjie He, Petr Nachtigall, Lukáš Grajciar, Federico Brivio

2021Journal of Materials Chemistry C14 citationsDOI

Abstract

Doping isolated one-dimensional antiferromagnetic semiconductor VS<sub>4</sub> nanowires with carriers induces half-metallicity.

Topics & Concepts

Materials scienceDopingAntiferromagnetismVanadiumSemiconductorNanowireMetallicityCondensed matter physicsNanotechnologyOptoelectronicsMetallurgyPhysicsStarsAstronomy2D Materials and ApplicationsMXene and MAX Phase MaterialsElectronic and Structural Properties of Oxides
Doping isolated one-dimensional antiferromagnetic semiconductor vanadium tetrasulfide (VS<sub>4</sub>) nanowires with carriers induces half-metallicity | Litcius