Vertical <i>β</i>-Ga2O3 metal–insulator–semiconductor diodes with an ultrathin boron nitride interlayer
Mingfei Xu, Abhijit Biswas, Tao Li, Ziyi He, Shisong Luo, Zhaobo Mei, Jingan Zhou, Cheng Chang, Anand B. Puthirath, Róbert Vajtai, Pulickel M. Ajayan, Yuji Zhao
Abstract
In this work, we demonstrate the high performance of β-Ga2O3 metal–insulator–semiconductor (MIS) diodes. An ultrathin boron nitride (BN) interlayer is directly grown on the Ga2O3 substrate by pulsed laser deposition. X-ray photoelectron spectroscopy, Raman spectroscopy, and high-resolution transmission electron microscopy confirm the existence of a 2.8 nm BN interlayer. Remarkably, with the insertion of the ultrathin BN layer, the breakdown voltage is improved from 732 V for Ga2O3 Schottky barrier diodes to 1035 V for Ga2O3 MIS diodes owing to the passivated surface-related defects and reduced reverse leakage currents. Our approach shows a promising way to improve the breakdown performance of Ga2O3-based devices for next-generation high-power electronics.