Subnanosecond Field‐Free Switching of a Wafer‐Scalable van der Waals Ferromagnet at Room Temperature
Ao Du, Weiran Xie, Tianxiao Nie, Shilei Ding, Kewen Shi, Xinran Wang, Mingxing Wu, Runyu Zhao, Renyou Xu, Daoqian Zhu, Jie Zhang, Pietro Gambardella, Weisheng Zhao
Abstract
Abstract Electrical manipulation of magnetism in 2D van der Waals (vdW) ferromagnet (FM) holds promise for next‐generation spintronic devices. Investigating field‐free, ultrafast switching at room temperature in wafer‐scalable vdW heterostructures can advance the development of faster memories and enhance the understanding of magnetization switching mechanisms in 2D FMs. In this study, field‐free, room temperature spin‐orbit torque (SOT) switching at subnanosecond timescales in a wafer‐scalable Fe 3 GaTe 2 /Pt heterostructure by epitaxial growth engineering is demonstrated. The introduction of a variable concentration gradient of Fe is used to establish the coexistence of in‐plane magnetic anisotropy (IMA) and perpendicular magnetic anisotropy (PMA) within the ferromagnetic layer. The field‐free switching, driven by the SOT from Pt, is achieved by using the IMA component to break the in‐plane symmetry during the switching process. This work paves the way for the integration of efficient 2D vdW materials in advanced spintronic devices and faster memory technologies.