Rapid Growth of Monolayer MoSe<sub>2</sub> Films for Large‐Area Electronics
Danzhen Zhang, Chengyu Wen, J. Brandon McClimon, Paul Masih Das, Qicheng Zhang, Grace A. Leone, Srinivas V. Mandyam, Marija Drndić, A. T. Charlie Johnson, Meng‐Qiang Zhao
Abstract
Abstract The large‐scale growth of semiconducting thin films on insulating substrates enables batch fabrication of atomically thin electronic and optoelectronic devices and circuits without film transfer. Here an efficient method to achieve rapid growth of large‐area monolayer MoSe 2 films based on spin coating of Mo precursor and assisted by NaCl is reported. Uniform monolayer MoSe 2 films up to a few inches in size are obtained within a short growth time of 5 min. The as‐grown monolayer MoSe 2 films are of high quality with large grain size (up to 120 µm). Arrays of field‐effect transistors are fabricated from the MoSe 2 films through a photolithographic process; the devices exhibit high carrier mobility of ≈27.6 cm 2 V –1 s –1 and on/off ratios of ≈10 5 . The findings provide insight into the batch production of uniform thin transition metal dichalcogenide films and promote their large‐scale applications.