Anomalous Nernst effect in Fe–Si alloy films
Yuki Hamada, Yuichiro Kurokawa, Tomoki Yamauchi, Hiroki Hanamoto, Hiromi Yuasa
Abstract
We experimentally investigated the anomalous Nernst effect (ANE) in an Fe3Si film, whose ANE was predicted to be large, based on the topological property and the Berry curvature, and systematically compared it with other compositions of iron-silicide, viz., Fe2Si, FeSi, and FeSi2 films. Although both the ferromagnetic Fe3Si and Fe2Si films showed an ANE voltage, the highest ANE coefficient SANE = 1.0 μV K−1 was obtained for Fe3Si, which is larger than that for Fe. We also measured the Seebeck and anomalous Hall effects to estimate the transverse thermoelectric conductivity αyx, suggesting that the contribution of αyx was dominant in the Fe3Si ANE enhancement.
Topics & Concepts
Nernst effectBerry connection and curvatureSilicideHall effectThermoelectric effectCondensed matter physicsNernst equationMaterials scienceSeebeck coefficientFerromagnetismAlloyElectrical resistivity and conductivityConductivitySiliconMetallurgyThermal conductivityElectrodeChemistryThermodynamicsPhysicsComposite materialPhysical chemistryGeometric phaseQuantum mechanicsMagnetic properties of thin filmsQuantum and electron transport phenomenaTopological Materials and Phenomena