Mathematical model on a photothermal and voids in a semiconductor medium in the context of Lord-Shulman theory
Jamel Bouslimi, Mohamed Omri, A. A. Kilany, S. M. Abo‐Dahab, A. Hatem
Abstract
The current research presents a new model on a volume fraction branch of Knowledge and photothermal effect in a semiconductor generalized thermoelasticity medium according to the Lord-Shulman Theory. The governing equations are provided considering voids, photothermal, semiconducting, and the theory of generalized thermoelasticity. The authors make use of the normal mode examination to solve the order of the equations in this phenomenon under the boundary conditions. The achieved results demonstrate the effect of photothermal, voids, the process of semiconductor, and the thermic relaxation time. The compared physical fields are given analytically and displayed in graphs. The achieved results display the possibility of applying the combination of the photothermal and semiconductors medium in biophysical, industries, structures, engineering, and chemical products with consideration of the photothermal, semiconducting, and voids.