High-Chern-number and high-temperature quantum Hall effect without Landau levels
Jun Ge, Yanzhao Liu, Jiaheng Li, Hao Li, Tianchuang Luo, Yang Wu, Yong Xu, Jian Wang
Abstract
Abstract The quantum Hall effect (QHE) with quantized Hall resistance of h/νe2 started the research on topological quantum states and laid the foundation of topology in physics. Since then, Haldane proposed the QHE without Landau levels, showing nonzero Chern number |C| = 1, which has been experimentally observed at relatively low temperatures. For emerging physics and low-power-consumption electronics, the key issues are how to increase the working temperature and realize high Chern numbers (C > 1). Here, we report the experimental discovery of high-Chern-number QHE (C = 2) without Landau levels and C = 1 Chern insulator state displaying a nearly quantized Hall resistance plateau above the Néel temperature in MnBi2Te4 devices. Our observations provide a new perspective on topological matter and open new avenues for exploration of exotic topological quantum states and topological phase transitions at higher temperatures.