Reliability issues of amorphous oxide semiconductor-based thin film transistors
Yuxuan Shen, Meng Zhang, Siyuan He, Le Bian, Jiaxin Liu, Zhengyu Chen, Shuangmei Xue, Ye Zhou, Yan Yan
Abstract
This review summarizes and discusses existing literature on reliability issues of amorphous oxide semiconductor thin-film transistors. The investigation focuses on bias stress, electro-static discharge, bending, and radiation reliability.
Topics & Concepts
Materials scienceReliability (semiconductor)Amorphous solidThin-film transistorOptoelectronicsTransistorOxideThin filmSemiconductorEngineering physicsAmorphous semiconductorsStress (linguistics)NanotechnologyElectrical engineeringMetallurgyLayer (electronics)EngineeringVoltageCrystallographyPhysicsPhilosophyQuantum mechanicsChemistryLinguisticsPower (physics)Thin-Film Transistor TechnologiesElectrical and Thermal Properties of MaterialsSemiconductor materials and devices