Miniaturized High-Selectivity High-Resistivity-Silicon IPD Bandpass Filter Based on Multiple Transmission Paths
Jun Zhang, Jin‐Xu Xu, Cong Yao, Xiu Yin Zhang
Abstract
In this letter, a miniaturized bandpass filter chip is designed and implemented on high-resistivity-silicon (HRS) integrated passive device (IPD) technology. The filter is designed into a three-path topology, which can generate multiple transmission zeros to achieve a high roll-off rate at the passband edge and good rejection in a very wide stopband. For validation, the filter chip operating at 5G N77 frequency band is fabricated with a compact size of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.1\times0.7$ </tex-math></inline-formula> mm2 on IPD technology. Measured results show an in-band insertion loss of smaller than 1.7 dB and a wide stopband from 5.39 to 31.5 GHz.