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Thickness dependence of the anomalous Nernst effect and the Mott relation of Weyl semimetal <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Co</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mi>MnGa</mml:mi></mml:mrow></mml:math> thin films

Gyu Hyeon Park, Helena Reichlová, Richard Schlitz, Michaela Lammel, Αναστάσιος Μάρκου, Peter Swekis, Philipp Ritzinger, Dominik Kriegner, Jonathan Noky, Jacob Gayles, Yan Sun, Claudia Felser, Kornelius Nielsch, Sebastian T. B. Goennenwein, Andy Thomas

2020Physical review. B./Physical review. B61 citationsDOIOpen Access PDF

Abstract

We report a robust anomalous Nernst effect in ${\mathrm{Co}}_{2}\mathrm{MnGa}$ thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of \ensuremath{-}2.0 to \ensuremath{-}3.0 $\ensuremath{\mu}\mathrm{V}/\mathrm{K}$ at 300 K. We demonstrate that the anomalous Hall and Nernst coefficients exhibit similar behavior and fulfill the Mott relation. We simultaneously measure all four transport coefficients of the longitudinal resistivity, transversal resistivity, Seebeck coefficient, and anomalous Nernst coefficient. We connect the values of the measured and calculated Nernst conductivity by using the remaining three magnetothermal transport coefficients, where the Mott relation is still valid. The intrinsic Berry curvature dominates the transport due to the relation between the longitudinal and transversal transport. Therefore, we conclude that the Mott relationship is applicable to describe the magnetothermoelectric transport in Weyl semimetal ${\mathrm{Co}}_{2}\mathrm{MnGa}$ as a function of film thickness.

Topics & Concepts

Nernst effectNernst equationSeebeck coefficientCondensed matter physicsBerry connection and curvatureElectrical resistivity and conductivityWeyl semimetalHall effectTransversal (combinatorics)PhysicsMaterials scienceThermoelectric effectThermodynamicsMathematicsSemimetalQuantum mechanicsMathematical analysisGeometric phaseBand gapElectrodeTopological Materials and PhenomenaHeusler alloys: electronic and magnetic propertiesAdvanced Thermoelectric Materials and Devices