Correlation between structural properties and nonradiative recombination behaviors of threading dislocations in freestanding GaN substrates grown by hydride vapor phase epitaxy
Yongzhao Yao, Yoshihiro Sugawara, Daisaku Yokoe, Koji Sato, Yukari Ishikawa, Narihito Okada, Kazuyuki Tadatomo, Masaki Sudo, Masashi Kato, Makoto Miyoshi, Takashi Egawa
Abstract
Nonradiative recombination behaviors of threading dislocations and their correlation with the dislocation types.
Topics & Concepts
Vapor phaseMaterials scienceHydrideEpitaxyOptoelectronicsRecombinationPhase (matter)Threading (protein sequence)CrystallographyNanotechnologyChemistryMetallurgyMetalLayer (electronics)ThermodynamicsBiochemistryPhysicsGeneOrganic chemistryProtein structureSemiconductor materials and devicesSemiconductor materials and interfacesIntegrated Circuits and Semiconductor Failure Analysis