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AlScN/GaN HEMTs with 4 A/mm on-current and maximum oscillation frequency >130 GHz

Kazuki Nomoto, Joseph Casamento, Thai‐Son Nguyen, Lei Li, Hyunjea Lee, Chandrashekhar Savant, Austin Hickman, Takuya Maeda, Jimy Encomendero, Ved Gund, T. Vasen, Shamima Afroz, Daniel Hannan, James C. M. Hwang, Debdeep Jena, Huili Grace Xing

2025Applied Physics Express21 citationsDOIOpen Access PDF

Abstract

Abstract Aluminum Scandium Nitride (AlScN) is an attractive material for use as a lattice-matched epitaxial barrier layer in GaN high-electron mobility transistors (HEMTs). Here we report the device fabrication, direct current (DC) and radio frequency (RF) characteristics of epitaxial AlScN/AlN/GaN HEMTs on SiC substrates with regrown ohmic contacts. These devices show record high on-current of over 4 A/mm, high cutoff frequency ( f T ) of 92.4 GHz and maximum oscillation frequency ( <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:msub> <mml:mrow> <mml:mi>f</mml:mi> </mml:mrow> <mml:mrow> <mml:mi mathvariant="normal">MAX</mml:mi> </mml:mrow> </mml:msub> </mml:math> ) of 134.3 GHz.

Topics & Concepts

Ohmic contactMaterials scienceOscillation (cell signaling)OptoelectronicsCutoff frequencyEpitaxyHigh-electron-mobility transistorTransistorFabricationBarrier layerGallium nitrideLayer (electronics)Electrical engineeringNanotechnologyChemistryVoltageEngineeringBiochemistryAlternative medicineMedicinePathologyGaN-based semiconductor devices and materialsMetal and Thin Film MechanicsRadio Frequency Integrated Circuit Design
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