Short Wavelength Photons Destroying Si–H Bonds and Its Influence on High‐Efficiency Silicon Solar Cells and Modules
Haoran Ye, Shenglei Huang, Cheng Qian, Zehua Sun, Yang Chen, Xinyao Song, Yutong Zhang, Na Wang, Y. M. Hu, Y. Y. Yang, Lei Li, Zhu Ma, Tao Chen, Wenzhu Liu, Jian Yu
Abstract
Photons of varying wavelengths exert substantial effects on silicon heterojunction (SHJ) solar cells. Collaborative research previously establishes that light soaking with long‐wavelength photons can activate boron doping in hydrogenated amorphous silicon (a‐Si:H), thereby augmenting cell efficiency (Eff). Herein, this investigation is extended, exploring the effects of short‐wavelength photons on a‐Si:H layers, SHJ solar cells, and modules. The ultraviolet A (UVA) light with the wavelengths peak of 365 nm can disrupt Si–H bonds, resulting in a notable reduction in hydrogen content within both intrinsic and doped a‐Si:H films, and the deterioration of deteriorated interface passivation. Following exposure to 60 kWh m −2 of UVA light, both Eff and module power output decrease significantly, primarily attributable to the degradation of open‐circuit voltage and fill factor. As a feasible solution, the application of a light‐soaking process or the implementation of UV band cutoff module encapsulants can effectively mitigate the loss induced by UV irradiation, thereby ensuring the long‐term operation of SHJ solar cells and modules. Herein, a deeper understanding of UV‐induced performance changes in a‐Si:H film and its degradation mechanism for SHJ solar cells are contributed to in this research and also a viable strategy is provided to counter UV‐induced degradation.