Investigation of Time Dependent Dielectric Breakdown (TDDB) of Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub>-Based Ferroelectrics Under Both Forward and Reverse Stress Conditions
Zhiwei Liu, Puyang Cai, Songhai Yu, Linxin Han, Runsheng Wang, Yanqing Wu, Pengpeng Ren, Zhigang Ji, Ru Huang
Abstract
Increasing demands for mass storage and new paradigm computing ask for non-volatile memories that can meet reliability requirements. Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based (HZO) memory has attracted growing attention due to its excellent CMOS compatibility. This letter investigated the time dependent dielectric breakdown (TDDB) of HZO ferroelectric under both forward and reverse stress conditions, which is relevant to the memory's practical operation. The key similarities and the differences for both breakdown conditions have been identified and the underlying mechanism is explored. It is found that the pre-existing oxygen vacancies near the bottom electrode play the key role and all the observed phenomenon can be explained. Therefore, the precise control of these pre-existing oxygen vacancies can be critical for future TDDB improvement.