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Stable, low-resistance, 1.5 to 3.5 kΩ sq−1, diamond surface conduction with a mixed metal-oxide protective film

M. W. Geis, Joseph O. Varghese, M.A. Hollis, Y. Yichen, R. J. Nemanich, C.H. Wuorio, Xi Zhang, G. W. Turner, Shireen Warnock, Steven A. Vitale, R. J. Molnar, T. Osadchy, B. Zhang

2020Diamond and Related Materials18 citationsDOI

Topics & Concepts

DiamondMaterials scienceOptoelectronicsSurface conductivitySemiconductorField-effect transistorSheet resistanceElectrical conductorNanotechnologyLayer (electronics)TransistorConductivityVoltageComposite materialElectrical engineeringChemistryEngineeringPhysical chemistryDiamond and Carbon-based Materials ResearchSemiconductor materials and devicesMetal and Thin Film Mechanics
Stable, low-resistance, 1.5 to 3.5 kΩ sq−1, diamond surface conduction with a mixed metal-oxide protective film | Litcius