Engineering the Surface Chemistry of Colloidal InP Quantum Dots for Charge Transport
Tianshuo Zhao, Qinghua Zhao, Jaeyoung Lee, Shengsong Yang, Han Wang, Ming-Yuan Chuang, Yulian He, Sarah Thompson, Guannan Liu, Nuri Oh, Christopher B. Murray, Cherie R. Kagan
Abstract
Colloidal InP quantum dots (QDs) have emerged as potential candidates for constructing nontoxic QD-based optoelectronic devices. However, charge transport in InP QD thin-film assemblies has been limitedly explored. Herein, we report the synthesis of ∼8 nm edge length (∼6.5 nm in height), tetrahedral InP QDs and study charge transport in thin films using the platform of the field-effect transistor (FET). We design a hybrid ligand-exchange strategy that combines solution-based exchange with S2– and solid-state exchange with N3– to enhance interdot coupling and control the n-doping of InP QD films. Further modifying the QD surface with thin, thermally evaporated Se overlayers yields FETs with an average electron mobility of 0.45 cm2 V–1 s–1, ∼10 times that of previously reported devices, and a higher on–off current ratio of 103–104. Analytical measurements suggest lower trap-state densities and longer carrier lifetimes in the Se-modified InP QD films, giving rise to a four-time longer carrier diffusion length.