Indium-doping-induced selenium vacancy engineering of layered tin diselenide for improving room-temperature sulfur dioxide gas sensing
Xuezheng Guo, Yijie Shi, Yanqiao Ding, Yuhui He, Yuhui He, Bingsheng Du, Chengyao Liang, Yiling Tan, Peilin Liu, Xiangshui Miao, Yong He, Yong He, Xi Yang
Abstract
Cation-doping engineering was utilized to induce selenium vacancies in tin diselenide for high-performance and room-temperature sulfur dioxide gas sensing.
Topics & Concepts
DiselenideSeleniumIndiumDopingTin dioxideTinSulfurSulfur dioxideMaterials scienceVacancy defectInorganic chemistryOptoelectronicsChemistryMetallurgyCrystallography2D Materials and ApplicationsGas Sensing Nanomaterials and SensorsPerovskite Materials and Applications