Self-powered ultraviolet MSM photodetectors with high responsivity enabled by a lateral n<sup>+</sup>/n<sup>−</sup> homojunction from opposite polarity domains
Chenyu Guo, Wei Guo, Yijun Dai, Houqiang Xu, Li Chen, Danhao Wang, Xianchun Peng, Ke Tang, Haiding Sun, Jichun Ye
Abstract
We report a GaN-based self-powered metal–semiconductor–metal (MSM)-type ultraviolet (UV) photodetector (PD) by employing a “lateral polarity structure (LPS)” grown on the sapphire substrate. An in-plane internal electric field and different Schottky barrier heights at a metal/semiconductor interface lead to efficient carrier separation and self-powered UV detection. A dark current of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mn>6.8</mml:mn> </mml:mrow> <mml:mspace width="thickmathspace"/> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:msup> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mi mathvariant="normal">n</mml:mi> <mml:mi mathvariant="normal">A</mml:mi> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mo>/</mml:mo> </mml:mrow> <mml:mi mathvariant="normal">c</mml:mi> <mml:mi mathvariant="normal">m</mml:mi> </mml:mrow> <mml:mn>2</mml:mn> </mml:msup> </mml:mrow> </mml:math> and detectivity of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mn>1.0</mml:mn> </mml:mrow> <mml:mo>×</mml:mo> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:msup> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mn>10</mml:mn> </mml:mrow> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mn>12</mml:mn> </mml:mrow> </mml:msup> </mml:mrow> </mml:math> Jones were obtained without applied bias. A high photo-to-dark current ratio of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mn>1.2</mml:mn> </mml:mrow> <mml:mo>×</mml:mo> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:msup> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mn>10</mml:mn> </mml:mrow> <mml:mn>4</mml:mn> </mml:msup> </mml:mrow> </mml:math> and peak responsivity of 933.7 mA/W were achieved for the lateral polarity structure-photodetector (LPS-PD) under <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mo>−</mml:mo> </mml:mrow> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mn>10</mml:mn> </mml:mrow> <mml:mspace width="thickmathspace"/> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mi mathvariant="normal">V</mml:mi> </mml:mrow> </mml:math> . The enhanced performance of the LPS-PD was ascribed to the polarization-induced carrier separation as demonstrated by the lateral band diagram.