An approximate CNTFET 4:2 compressor based on gate diffusion input and dynamic threshold
Mahmood Rafiee, Yaqhoub Sadeghi, Nabiollah Shiri, Ayoub Sadeghi
Abstract
Abstract Here, a new 4:2 approximate compressor is presented by the gate diffusion input (GDI) technique. Although GDI cells suffer from threshold voltage drop, the dynamic threshold approach and carbon nanotube field‐effect transistors are merged to overcome the mentioned problem. The proposed cell has full‐swing outputs, while its error and power delay product are at low rates. Therefore, low voltage multipliers that are used in image processing can benefit from the proposed compressor.
Topics & Concepts
Gas compressorCarbon nanotube field-effect transistorDiffusionElectronic engineeringComputer scienceMaterials scienceElectrical engineeringPhysicsTransistorEngineeringField-effect transistorVoltageAerospace engineeringThermodynamicsLow-power high-performance VLSI designAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and devices