Ferroelectric polarizations engineered reversible skyrmion–bimeron switch in van der Waals heterostructure RuClBr/Ga2S3
Yong Ping Lei, Wei Sun, Xianghong Niu, Wenqi Zhou, Xueke Yu, Yongjun Liu, Xiuyun Zhang
Abstract
Controllable operation between different magnetic topological states, such as skyrmions and bimerons, which share the same topological charge but exhibit distinct properties, has garnered extensive attention due to their potential applications in future high-density memory technologies. However, their remarkable origin mechanisms (e.g., in-plane and out-of-plane easy magnetic axis) make effective control of their switching a huge challenge. Based on first-principles calculations, we explore the 2D RuClBr/Ga2S3 van der Waals heterostructure and find that the skyrmion and bimeron topological states could be switched instantaneously and efficiently by regulating the electric polarization of Ga2S3 with an external electric field. Additionally, atomic spin dynamic simulations reveal that the evolved skyrmion and bimeron magnetic configurations are highly resistant to external disturbances, enduring external magnetic fields of up to 20 T. This efficient transformation between magnetic states is driven by magnetic anisotropy accompanying changes in the polarization state. Our work predicts that the RuClBr/Ga2S3 system is an ideal platform for addressing this control problem.