Large nonsaturating magnetoresistance, weak anti-localization, and non-trivial topological states in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>SrAl</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Si</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>
Sudip Malick, Anan Bari Sarkar, Antu Laha, Mohd Anas, V. K. Malik, Amit Agarwal, Z. Hossain, Jayita Nayak
Abstract
We explore the electronic and topological properties of single-crystal ${\mathrm{SrAl}}_{2}{\mathrm{Si}}_{2}$ using magnetotransport experiments in conjunction with first-principle calculations. We find that the temperature-dependent resistivity shows a pronounced peak $\ensuremath{\sim}50$ K. We observe several remarkable features at low temperatures such as large nonsaturating magnetoresistance (MR), Shubnikov--de Haas oscillations and cusplike magnetoconductivity (MC) . The maximum value of MR turns out to be 459% at 2 K and 12 T. The analysis of the cusplike feature in MC indicates a clear signature of weak anti-localization. Our Hall resistivity measurements confirm the presence of two types of charge carriers in ${\mathrm{SrAl}}_{2}{\mathrm{Si}}_{2}$ with low carrier density.