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Analysis of V<sub>TH</sub> Degradation and Recovery Behaviors of p-GaN Gate HEMTs Under Forward Gate Bias

Xin Chao, Chengkang Tang, Jingjing Tan, Lin Chen, Hao Zhu, Qingqing Sun, David Wei Zhang

2023IEEE Transactions on Electron Devices10 citationsDOI

Abstract

In this work, detailed <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> degradation and recovery behaviors of p-GaN gate high electron mobility transistors (HEMTs) are studied under forward gate bias and elevated temperatures. Based on multiple time-evolving stress/recovery experiments, the abrupt negative <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Delta {V}_{\text {TH}}$ </tex-math></inline-formula> behavior at initial recovery time at low <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {GS}}$ </tex-math></inline-formula> level as well as the suppressed <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {TH}}$ </tex-math></inline-formula> shift at high temperature have been observed. It is experimentally found that trapped electrons are more rapid-recoverable than the holes, and the carrier trapping effect is mitigated due to the strengthened carrier emission and recombination process across the AlGaN barrier at elevated temperatures. The ON-resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{ \mathrm{\scriptscriptstyle ON}}{)}$ </tex-math></inline-formula> degradation behavior is also investigated within the same experiment, and the trapped holes at the passivation/AlGaN interface result in a decrease in <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula> .

Topics & Concepts

NotationDegradation (telecommunications)PhysicsAlgorithmMaterials scienceMathematicsElectrical engineeringArithmeticEngineeringGaN-based semiconductor devices and materialsGa2O3 and related materialsZnO doping and properties
Analysis of V<sub>TH</sub> Degradation and Recovery Behaviors of p-GaN Gate HEMTs Under Forward Gate Bias | Litcius